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Synopsys Suggests

Signoff Leadership in Extending the Frontiers of Digital Design

Synopsys signoff solutions, including PrimeTime® and StarRC™, leading the industry with advanced innovation technologies that deliver golden accuracy, fast turnaround and best ...

Fusion Technology: Broadly addressing the challenges of 5-nm-and-below processes

Architected to extract maximum process entitlement for 5-nm-and-beyond processes’, Synopsys’ latest Fusion Technology is helping customers realize optimal full-flow, power, performance and area ...

How to Reduce the Amount of Time to Fix DRCs Near Tapeout

In the later stages of design cycle, it is important to identify and fix DRC issues quickly to meet the tapeout schedule. This video discusses some techniques and best practices. Taking advantage ...

Better Modeling of Clock Net Inductance for 7 and 5 Nanometer Designs

Inductance effects on clock nets can have serious consequences to performance and reliability of today’s advanced process technology designs. In this video, Greg Rollins, principle engineer from ...

Near Threshold Timing Analysis and Signoff Accuracy

Achieving timing signoff accuracy for near threshold ultra-low voltage designs at advanced 5nm and below process technologies

SNUG Silicon Valley 2018 Custom Design Lunch

Accelerating Robust Custom Design

SNUG Silicon Valley 2018: IC Validator Panel Video

The IC Validator panel at SNUG Silicon Valley focused on how leading companies address the challenges, technologies and solutions related to a convergent and efficient physical signoff flow that ...

Solving Parasitic Modeling Challenges at 5nm and Below

This video will explain technical tips for overcoming parasitic modeling challenges at 5nm and below. We'll discuss the differences between QuickCap vs deterministic methods

Manufacturing Solutions to Accelerate Process Research and Development

For semiconductor manufacturers to develop nodes beyond 10 and 7nm, they must quickly and methodically explore many options in the areas of materials, process, devices, and lithography to find the ...

Innovation Through Technology Leadership and Partnership-Oriented DNA

The most advanced volume production nodes are 12/10 nanometers, while 8/7 nanometers, both immersion lithography and EUV, are in final stages of development, and will move into volume production soon